NST857BDP6T5G ON Semiconductor BJT Dual PNP GP Trans SOT-963 BJT Dual PNP GP Trans SOT-963 BJT Dual PNP GP Trans SOT-963

NST857BDP6T5G  ON Semiconductor  BJT Dual PNP GP Trans SOT-963 BJT Dual PNP GP Trans SOT-963 BJT Dual PNP GP Trans SOT-963

Manufacturer: ON Semiconductor

Product Category: Bipolar Transistors - Bipolar Junction Transistors (BJT)

RoHS: Details

Installation style: SMD/SMT

Package/Box: SOT-963-6

Transistor polarity: PNP

Configuration: Dual

Collector - emitter maximum voltage VCEO: 45 V

Collector - base voltage VCBO: 50 V

Emitter - base voltage VEBO: 6 V

Maximum DC collector current: 0.1A

PD-power dissipation: 420 mW

Gain bandwidth product FT: 100 MHz

Minimum operating temperature: -55 C

Maximum operating temperature: + 150 C

Series: NST857BDP6

Packaging: Cut Tape

Packaging: MouseReel

Packaging: the biennial Reel

Maximum DC current gain HFE: 220 at 2 mA, 5 V

Height: 0.37mm

Length: 1 mm

Technology: the Si

Width: 0.8mm

Branding: ON Semiconductor

DC collector /Base Gain HFe Min: 220 at 2 mA, 5 V

BJTS - Bipolar Transistors

Factory packing quantity: 8000

Subcategory: Transistors

Unit weight: 1.190 mg